• 专利标题:   Full-medium wave absorber based on graphene and dirac semimetal, has wave absorber main portion that is composed of layer structure, graphene layer, dielectric layer and dirac semi-metal from bottom to top.
  • 专利号:   CN111585040-A
  • 发明人:   CHEN M, WANG S, ZHANG W, ZHANG Y, CHEN H, YUAN L
  • 专利权人:   UNIV GUILIN ELECTRONIC TECHNOLOGY
  • 国际专利分类:   G02B005/00, H01Q015/00, H01Q017/00
  • 专利详细信息:   CN111585040-A 25 Aug 2020 H01Q-017/00 202076 Pages: 8 Chinese
  • 申请详细信息:   CN111585040-A CN10318920 21 Apr 2020
  • 优先权号:   CN10318920

▎ 摘  要

NOVELTY - The absorber has a wave absorber main portion that is composed of a layer structure, a graphene layer (1), a dielectric layer (2,3) and a dirac semi-metal (4) from bottom to top. The graphene layer is a single-layer graphene with a thickness equal to 0.34 nm, and length and width are P equal to 7000 nm. The dielectric layer is formed of silicon dioxide with a thickness equal to 600nm. The dielectric layer of silicon is provided with a thickness equal to 1200nm, and length and width are equal to 7000nm. The dirac semi-metal is a bulk dirac semi-metal provided in the shape of dart with a thickness equal to 600nm. The cylinders are provided with a thickness of equal to 600nm intersect each other. USE - Full-medium wave absorber based on graphene and dirac semi-metal. ADVANTAGE - The system provides high absorption efficiency and non-sensitive polarization. The adjustment range is wide. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the full-medium wave absorber based on graphene and dirac semi-metal. Graphene layer (1) Dielectric layer (2,3) Dirac semi-metal (4)