▎ 摘　　要

NOVELTY - Fabricating (M1) a semiconductor device package (100), comprises: forming a carbon-based material (104) on a sacrificial substrate; inverting the sacrificial substrate; bonding the sacrificial substrate to a wafer comprising semiconductor device components; and after the bonding, removing the sacrificial substrate to leave the carbon-based material over the wafer. USE - The method is useful for fabricating semiconductor device package. ADVANTAGE - The method provides the semiconductor device packages which exhibits a very low height form factor, enabling improved scaling in three-dimensional stacks that include such packages. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (a) fabricating (M2) a semiconductor device package; and (b) a device package, comprising a redistribution layer (102) comprising conductive elements comprising a conductive carbon-based material defining a vertical height, between a lower surface and an upper surface of the conductive carbon-based material, of less than 0.2 microm, passivation material (114) laterally between and partially overlapping the upper surface of the conductive elements, where the passivation material defines openings extending therethrough to the conductive elements, and a device region directly adjacent the conductive carbon-based material of the conductive elements of the redistribution layer. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional, elevational, schematic view of the semiconductor device package. Device package (100) Redistribution layer (102) Carbon-based material (104) Surface (109) Passivation material (114)