▎ 摘　　要

NOVELTY - A silicon substrate is cleaned in a standard manner, cleaned silicon substrate is provided in a reaction chamber of chemical vapor deposition system, and reaction chamber is vacuumized. Reaction chamber is heated, and introduced into propane for carbonizing the substrate for producing carbide layer. Double-layer carbon film sample is provided with silica removed on nickel film, reconstructed on window position for producing double-layer structured graphene, and nickel film is removed out from double-layer structured graphene sample, to obtain structured graphene. USE - Preparation of structured graphene used for producing microelectronic device. ADVANTAGE - The structured graphene is efficiently prepared with low porosity. DETAILED DESCRIPTION - A silicon substrate is cleaned to 4-12 inches in a standard manner, cleaned silicon substrate is provided in a reaction chamber of chemical vapor deposition system, and reaction chamber is vacuumized until level (1/10) is reached to the seventh power mbar. The reaction chamber is gradually heated at 1000-1200 degrees C under the protection of hydrogen, and introduced into propane with flow rate of 30 ml/minute for carbonizing the substrate for 4-8 minutes for producing a carbide layer. The reaction chamber is heated at 1200-1350 degrees C, introduced into propane and silicon hydride for subjecting 3C silicon carbide film heteroepitaxial growth for 30-60 minutes, and gradually cooled to room temperature under the protection of hydrogen. Layer of silica is deposited with thickness of 0.5-1 micron on the surface of grown 3C silicon carbide film for serving as a mask using plasma enhanced chemical vapor deposition. Layer of photoresist is coated on the surface of mask, then window is carved to the substrate of the device to produced on the mask for exposing the 3C silicon carbide for forming a structured pattern. The windowed sample is provided in a quartz tube, and devices are connected for heating the quartz tube at 800-1000 degrees C, and three-neck flask filled is heated with a carbon tetrachloride liquid at 60-80 degrees C, argon gas is introduced with flow rate of 40-80 ml/minute into the three-neck flask, and carbon tetrachloride steam is carried the into the quartz tube for reacting carbon tetrachloride with the exposed 3C silicon carbide for 30-120 minutes for producing double-layer carbon film using argon gas. The produced double-layer carbon film sample is provided in a hydrofluoric acid buffer solution for removing the silica beyond the window, and a nickel film with thickness of 300-500 nm is deposited on the other silicon sample by electronic beam. The double-layer carbon film sample is provided with silica removed on a nickel film, and provided into the argon gas for annealing for 15-25 minutes at 900-1100 degrees C. The double-layer carbon film is reconstructed on the window position for producing double-layer structured graphene, and then nickel film is removed out from the double-layer structured graphene sample, to obtain structured graphene.