▎ 摘　　要

NOVELTY - The structure has a Heusler alloy, and a graphene that is directly-contacted with the Heusler alloy on the surface of the Heusler alloy. The graphene is a reaction product of the Heusler alloy and carbon. The reflection high energy electron diffraction in a predetermined incident angle shows both the diffraction from the graphene, and the diffraction from the Heusler alloy. USE - Laminated structure used in magneto-resistive element (claimed) used in hard-disk drive and magnetic RAM. ADVANTAGE - The laminated structure which made the low electrical resistance make compatible with a high spin-polarization rate is provided. The magneto-resistive elements to which the laminated structure is applied have high magneto-resistive ratio required for a next-generation magnetic memory, and a low sheet resistivity, and can implement high-density recording. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a magneto-resistive element; and (2) a manufacturing method of laminated structure. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the laminated structure. Laminated structure (10) Heusler alloy (11) Graphene (12)