▎ 摘　　要

NOVELTY - Forming (100) an electronic device, comprises: (a) forming a graphene barrier layer (20) on a substrate surface (10); and (b) depositing a fill layer (30) over the graphene barrier layer, where the graphene barrier layer prevents diffusion of at least one element between the fill layer and the substrate surface. USE - The method is useful for forming an electronic device i.e. 3-dimentional NAND device (claimed). ADVANTAGE - The method provides thin graphene barrier layer, which: prevents diffusion of smaller atoms e.g. fluorine and boron from fill layer into substrate surface and/or vice versa; allows for a greater quantity of fill material with lower resistivity; and reduces the concentration. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) forming an electronic device, comprising the step (a) as per se, forming an amorphous silicon layer on the graphene barrier layer, and exposing the amorphous silicon layer to a tungsten precursor to form a tungsten layer by atomic substitution, where the tungsten precursor comprises tungsten hexafluoride, and the graphene barrier layer prevents diffusion of fluorine into the substrate surface; and (2) an electronic device comprising the graphene barrier layer between a first material and a second material, where the graphene barrier layer prevents diffusion of at least one element between the first material and the second material. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a substrate during processing. Substrate surface (10) Graphene barrier layer (20) Fill layer (30) Forming electronic device (100)