▎ 摘　　要

NOVELTY - The apparatus (10) comprises a two-dimensional graphene (14) extending along the oxidized surface of a semiconductor chip (12). The ends of the graphene are connected to source electrode (15) and drain electrode (16) respectively. A source-drain (SD) voltage between the source and drain electrodes is detected by a SD voltage detection circuit (18). A variable magnetic field (B) is applied to the graphene by magnetic field generating device (20). USE - Terahertz wave detecting apparatus. Uses include but are not limited to fields of radio, astronomy, material science, biomolecular spectroscopy, security, information communication environment and medical care. ADVANTAGE - The intensity of very weak terahertz light can be detected accurately using unique electronic properties of graphene, without the need for ultralow temperature and without complicating the structure of apparatus. The frequency of the terahertz light in a very wide frequency range can be measured accurately. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for terahertz wave detecting method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of terahertz wave detecting apparatus. Terahertz wave detecting apparatus (10) Semiconductor chip (12) Two-dimensional graphene (14) Source electrode (15) Drain electrode (16) Gate electrode (17) SD voltage detection circuit (18) Magnetic field generating device (20) Detection control device (22) Magnetic field (B)