▎ 摘　　要

NOVELTY - A p-type semiconductor element (10) comprises a substrate (1), an electrode (E1), an electrode (E2), a semiconductor layer (4) in contact with electrodes (E1) and (E2), an insulating layer (3) in contact with the semiconductor layer, an electrode (E3) in contact with the insulating layer on the side opposite to layer (3) with respect to the semiconductor layer, and an insulating layer (8) in contact with the semiconductor layer on a side opposite to layer (3) with respect to the semiconductor layer. The semiconductor layer comprises carbon nanotubes or graphene (7). Layer (8) is made of an organic compound (A) having a lowest unoccupied molecular orbital energy level of -5.8 eV to -3.2 eV, and a polymer (B), or a polymer (P) containing in its molecular structure the groups remaining after removing some atoms from the structure of compound (A). USE - p-type semiconductor element is used for complementary semiconductor device, thin-film transistor array, sensor, and wireless communication device (all claimed) for integrated circuit and radio-frequency identification tag of various electronic devices. ADVANTAGE - The p-type semiconductor element satisfies both high on-current and low off-current. By improving the adhesion between the electrode and insulation layer, the effect of improving bending resistance of the electrode and effect of suppressing the fluctuation of electrical characteristics when a voltage is repeatedly applied to the semiconductor element is suppressed, which results in improved reliability of the semiconductor element. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a complementary semiconductor device, which comprises the p-type semiconductor element and an n-type semiconductor element; manufacture of the p-type semiconductor element, which involves forming layer (8) by applying compound (A), a composition containing a polymer and a solvent, or a composition containing polymer (P) and a solvent, and drying the applied composition; and a wireless communication device, which comprises the p-type semiconductor element and an antenna. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the p-type-semiconductor element. 1Substrate 3,8Insulating layers 4Semiconductor layer 7Carbon nanotubes or graphene 10Semiconductor element