▎ 摘　　要

NOVELTY - The circuit has a graphene photosensitive image element changes resistance value correspondingly with change of a light intensity. A graphene dark image component is fixed when the light intensity is changed. A first end of the graphene dark image component is connected to a bias voltage VDD. A terminal is electrically connected to a current regulating unit. A first end of the graphene photosensitive image element is electrically connected to the current adjustment unit and a second end is grounded. An input terminal of an integrating unit is electrically connected to the current regulating unit. The current adjustment unit adjusts signal current flowing into the integration unit according to the provided bias voltage. The integration unit integrates input signal current to convert current signal into a voltage signal. USE - Non-uniformity correction circuit for graphene near-infrared detector. ADVANTAGE - The circuit adopts bias compensation process for specific pixels by applying different bias voltages to realize non-uniformity correction of specific pixels in graphene detector array, which is easy to integrate on-chip and has low cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for utilizing non-uniformity correction circuit for graphene near-infrared detector. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a non-uniformity correction circuit. '(Drawing includes non-English language text)'