▎ 摘　　要

NOVELTY - Forming graphene oxide pattern, comprises preparing a substrate (1), preparing a hydrophobic self-assembly monomolecular film (2) on surface of the substrate, after covering the hydrophobic self-assembly monomolecular film by a mask, exposing to an ultraviolet lamp (3), removing the mask after exposure to obtain a substrate comprising a patterning template of the self-assembly monomolecular film, and covering the patterning template of the film by aqueous solution of graphene oxide (4) quantum dot (5), drying and forming the graphene oxide pattern on at least one surface of the substrate. USE - The method is useful for forming graphene oxide pattern (claimed), which is useful for preparing micro electronic component, energy storage and high strength material preferably core material and in micro electronic device field. ADVANTAGE - The method provides graphene oxide pattern with improved optical property, strong mechanical performance, excellent conductivity and load capacity suction, and high strength, in a simple and an economical manner. DETAILED DESCRIPTION - Forming graphene oxide pattern, comprises: either preparing a substrate (1), preparing a hydrophobic self-assembly monomolecular film (2) on at least one surface of the substrate, after covering the hydrophobic self-assembly monomolecular film by a mask, exposing by an ultraviolet lamp (3), removing the mask after exposure to obtain a substrate comprising a patterning template of the self-assembly monomolecular film, covering the patterning template of the film by aqueous solution of graphene oxide (4) quantum dot (5), and drying and forming the graphene oxide pattern on at least one surface of the substrate; or mixing the aqueous solution of graphene oxide with the concentration of 1-3 mg/ml with chloroacetic acid and sodium hydroxide under the ultrasonic condition at 30-40 degrees C for 3-5 hours, centrifuging at 20-30 degrees C, collecting solid, and mixing the solid with deionized water to obtain aqueous solution-1, and adding an organic matter containing the hydrophilic functional group and 1-ethyl-(3-dimethylaminopropyl)carbodiimide hydrochloride into the aqueous solution-1, stirring at 10-40 degrees C for 12-48 hours, and dialyzing the mixture by a dialysis bag with a cut-off molecular weight of 8000-14000 for 20-40 hours. An INDEPENDENT CLAIM is included for forming a graphene pattern, comprising heating the graphene oxide pattern in a reductive atmosphere at 800-1000 degrees C for 15-60 minutes. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the method of forming graphene oxide pattern (Drawing includes non-English language text). Substrate (1) Self-assembled monomolecular film (2) Ultraviolet lamp (3) Aqueous solution of graphene oxide quantum dots (4) Quantum dots. (5)