▎ 摘　　要

NOVELTY - The photodiode (10) has a first electrode (401) and a second electrode (403) that are positioned spaced apart from each other. A first semiconductor layer (100) is positioned between the first electrode, and a first single-layer graphene layer (200) is arranged between first and second semiconductor layers (300). The first single layer graphene layer has a thickness of 0.1-0.5 nm. A second single-layered graphene layer and a third single-layers graphene layer are arranged on an opposite surface of the first and the second single layers graphene layers. A transition metal chalcogenide compound is provided in the second semiconductor layer. USE - Photodiode. ADVANTAGE - The infrared sensing characteristics of the photodiode can be secured through the single-layer graphene layer. The near infrared rays and far infrared rays can be responded with low energy. The IR sensing characteristics can be improved. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a photodiode. 10Photodiode 100First semiconductor layer 200First single-layer graphene layer 300Second semiconductor layer 401First electrode 403Second electrode