• 专利标题:   Composite substrate for gallium nitride microwave power components, has silicon carbide layer formed on graphene layer, silicon substrate formed on carbide and insulating layers, and another silicon substrate arranged on insulating layer.
  • 专利号:   TW780901-B1, TW202312230-A
  • 发明人:   TSENG C, LI W
  • 专利权人:   WAFER WORKS CORP
  • 国际专利分类:   H01L021/02, H01L029/15, H01L029/20, H01L029/66, H01L029/778
  • 专利详细信息:   TW780901-B1 11 Oct 2022 H01L-021/02 202309 Pages: 38 Chinese
  • 申请详细信息:   TW780901-B1 TW133642 09 Sep 2021
  • 优先权号:   TW133642

▎ 摘  要

NOVELTY - A composite substrate is provided in some embodiments of the present disclosure, including a graphene layer, a silicon carbide layer, a first silicon substrate, an insulation layer and a second silicon substrate. The silicon carbide layer is disposed on the graphene layer. The first silicon substrate is disposed on the silicon carbide layer. The insulation layer is disposed on the first silicon substrate. The second silicon substrate is disposed on the insulation layer. A method of manufacturing a composite substrate is further provided in some embodiments of the present disclosure.