▎ 摘　　要

NOVELTY - Preparing cadmium zinc telluride film by directional growth on a graphene substrate comprises (i) the washing copper foil with an acetone solution to remove organic impurities on the surface of the copper foil, and placing the cleaned copper foil in the CVD growth chamber, introducing hydrogen gas, removing the surface oxide, introducing a mixed gas of methane and hydrogen, respectively, stopping the introduction of methane, and cooling, (ii) wiping the reaction chamber, grinding bismuth zinc cadmium single crystal, placing in the reaction chamber, vacuuming, heating, and cooling, (iii) polishing the CdZnTe film sample by hand polishing, and annealing the polished CdZnTe film sample in a CdCl2 atmosphere, preparing bromine methanol solution having a bromine concentration of 0.1-0.5%, and immersing the degassed CdZnTe film sample in a bromine methanol solution for etching for 10-60 seconds. USE - The method is useful for preparing cadmium zinc telluride film by directional growth on graphene substrate. ADVANTAGE - The method has high batch feasibility and is simple, economical and suitable for large area production. DETAILED DESCRIPTION - Preparing cadmium zinc telluride film by directional growth on a graphene substrate comprises (i) the washing copper foil with an acetone solution to remove organic impurities on the surface of the copper foil, and placing the cleaned copper foil in the CVD growth chamber, controlling the pressure of argon gas to 100-600 mTorr, introducing hydrogen gas at a flow rate of 10-50 sccm, heating to 500-2000 degrees C for 10-60 minutes, removing the surface oxide of the copper foil, maintaining constant temperature, introducing a mixed gas of methane and hydrogen at a flow rate of 1-20 sccm for 10-30 minutes, respectively, controlling the volume fraction of hydrogen in the mixed gas in the CVD growth chamber is 10-80%, and the product formed on the copper foil is a graphene film, stopping the introduction of methane, in the above argon and hydrogen environment, and cooling the graphene film naturally in the CVD reaction chamber, (ii) using the near-space sublimation method, wiping the reaction chamber with a dust-free cloth to remove the impurities in the reaction chamber, grinding the bismuth zinc cadmium single crystal into a powder as a sublimation source, placing in the reaction chamber, using the graphene film as a subspace sublimation substrate, and placing the substrate into the reaction chamber , vacuuming mechanical pump, pumping the air pressure in the reaction chamber to below 5 Pa, adjusting the distance between the substrate and the sublimation source is not more than 10 mm, heating the sublimation source and the substrate to 400-650 degrees C and 200-550 degrees C, respectively, growing the CdZnTe for 10-500 minutes, and the product formed on the graphene film is a CdZnTe film to obtain a CdZnTe film sample, turning off the heating source, and the mechanical pump, and cooling the CdZnTe film sample to room temperature, and taking out the CdZnTe film sample, (iii) using the alumina of 0.03-1 mu m particle size as the polishing material, polishing the CdZnTe film sample by hand polishing, and annealing the polished CdZnTe film sample at 300-450 degrees C for 20-60 minutes in a CdCl2 atmosphere, preparing bromine methanol solution having a bromine concentration of 0.1-0.5%, and immersing the degassed CdZnTe film sample in a bromine methanol solution for etching for 10-60 seconds.