▎ 摘　　要

NOVELTY - The sensor (100) has a substrate (110) which includes a buried insulator layer (116) arranged between a first semiconductor layer (112) and a second semiconductor layer (114). A photodiode (120) is arranged in the first semiconductor layer. A quenching resistance element (130) is electrically connected in series with the photodiode. The quenching resistance element is arranged in the second semiconductor layer. The quenching resistance element is arranged over the photodiode and is separated from the photodiode by the buried insulator layer. USE - Sensor e.g. photosensor used in microscopy, biomedical diagnostics, space telescope, consumer electronic, embedded quantum security, optolab-on-chip, three dimensional (3D) vision, near infrared imaging (NIRI), time-of-flight positron emission tomography (TOF PET), fluorescence lifetime imaging microscopy (FLIM) , super-resolution ground-state depletion microscopy with subsequent single-molecule return (GSDIM), time-resolved Raman spectroscopy, single-photon emission computed tomography (SPECT), and fluorescence Correlation Spectroscopy (FCS). ADVANTAGE - The higher photon detection efficiency (PDE) is achieved. The smaller footprint is achieved by the sensor. The less area of the light incidence surface of the photodiode is shielded by the quenching resistance element in the sensor and more space is made available for the light illumination than in the semicircular quenching resistance element. The quenching resistance in the sensor achieves an adjustable quenching resistance and the requirement on the quenching resistance. The sensor is capable of low fill factor and front lighting. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of forming the sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the sensor. Sensor (100) Substrate (110) First semiconductor layer (112) Second semiconductor layer (114) Buried insulator layer (116) Photodiode (120) Quenching resistance element (130)