▎ 摘　　要

NOVELTY - The electronic device has nanoflakes provided between two nanoribbon junctions, and nano of lakes provided between nanorbons. The nanorabons are made of graphene and hexagonal boron nitride, and a non-volatile memory device is provided with nano sensor and a switching device. The nano sensor is arranged in region, where the nanorsets are intersected by an external force, where one of the nano-lakes is selected from the group consists of the graphene and the hexagon borone nitride. The other nano-lake is made of the material selected from graphene and boronic borine nitride (h-BN). The former nano-flake is placed in the region which is formed between the two nano-branched regions. USE - Electronic device e.g. non-volatile memory device, nano sensor, and switching device used as basic structure of various NEMS devices such as switch, accelerometer, sensor and quantum computing. ADVANTAGE - The electronic device can process a digital signal, and can be used as a switching device, a nonvolatile memory device, and a nano sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of electronic device non-volatile memory device.