▎ 摘　　要

NOVELTY - Self-driven near-infrared long-wave photodetector based on indium selenide/silicon vertical structure heterojunction is prepared by using a planar silicon with an insulating layer on its upper surface, as a substrate, etching the insulating layer in the middle portion and exposing the planar silicon to form a detector window, depositing indium selenide film by magnetron sputtering on the detector window to construct indium selenide/silicon heterojunction, transferring the graphene to the top of the heterojunction and partially overlapping the unetched insulating layer on both sides, observing that the graphene forms an ohmic contact with indium selenide film as a transparent top electrode, depositing a metal thin film electrode (A) over the graphene in contact with the insulating layer to form an ohmic contact with the graphene, and depositing a metal thin film electrode (B) to the back surface of the planar silicon to form an ohmic contact with the planar silicon. USE - Self-driven near-infrared long-wave photodetector based on indium selenide/silicon vertical structure heterojunction. ADVANTAGE - The self-driven near-infrared long-wave photodetector has superior performance, and can be prepared by simple method, having excellent compatibility with existing silicon-based semiconductor process. The detector has obvious optical response outside the absorption limit of silicon, due to the usage of defects to enhance the absorption of indium selenide film in the near-infrared, and compensates for the shortcoming of silicon-based device for near-infrared long-wave response. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of the self-driven near-infrared long-wave photodetector, which involves ultrasonically washing planar silicon having insulating layer, with acetone, alcohol and deionized water, drying, etching specific position of the insulating layer on the substrate to remove and expose the planar silicon to form a detector window, depositing a dense indium selenide film by magnetron sputtering on the detector window, such that the film completely covers and does not exceed the detector window, cutting graphene on copper foil into a specific size area, which is larger than the detector window area and smaller than the substrate area, spin-coating poly(methyl methacrylate) on the front side of graphene, heating at 85 degrees C for 5 minutes, placing in a copper etching solution, transferring the graphene to the upper surface of the silica and indium selenide films by wet transfer method, heating at 85 degrees C for 30 minutes, placing in an acetone solution to remove the surface poly(methyl methacrylate), using the remaining graphene as a transparent top electrode, using a vacuum deposition technique or brushing a conductive adhesive to form metal thin film electrode (A) over the insulating layer covered with graphene, and grinding and coating back surface of the planar silicon to form metal film electrode (B).