▎ 摘　　要

NOVELTY - The method involves providing an insulating substrate with a graphene material layer and a metal layer. A source terminal and a drain terminal of a graphene FET device are arranged with a graphene material layer. A thin metal layer is evaporated for performing detects treatment process on the graphene material layer by a metal layer mask. Thickness of the metal layer mask is measured for about a 3-8 nm. The metal layer mask is made by metal palladium, nickel, titanium, or chromium materials. The source and drain terminals of the graphene FET device are made by metal material. USE - Method for reducing a metal-graphene contact resistance of a graphene FET device (claimed). ADVANTAGE - The method enables performing detect treatment process so as to increase end-contact area of a conductive channel, thus reducing metal and graphene contact resistance, and hence increasing on-state current and cut-off frequency of the graphene FET device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene FET device. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a graphene FET device.