▎ 摘　　要

NOVELTY - The method involves forming (S2) an epitaxial structure on a semiconductor substrate. The epitaxial structure includes a gallium-nitride layer and an indium-aluminum-nitride barrier layer formed on the surface of the gallium-nitride layer. A graphene film is formed (S3) on the surface of the indium-aluminum-nitrogen barrier layer. A source electrode and a drain electrode are formed (S4) on the surface of the graphene film. A gate opening is defined (S5) on the epitaxial structure between the source electrode and the drain electrode. The gate opening penetrates the graphene film to expose the indium-aluminum-nitrogen barrier layer. A dielectric passivation layer is formed on the indium-aluminum-nitrogen barrier layer corresponding to the gate opening. A gate structure is formed (S6) on the dielectric passivation layer to prepare a gallium-nitride device. USE - Method of manufacturing gallium nitride device structure based on graphene covering layer. ADVANTAGE - Since the graphene film is used to cover the surface of the indium-aluminum-nitrogen barrier layer, the problems of tunnel leakage and current collapse effects caused by device surface defects are solved. The heat dissipation effect is improved in a simple way, since the graphene film is used as a heat dissipation layer. The ohmic contact resistance is effectively reduced. The gate tunneling current is reduced by covering the graphene film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a gallium-nitride device structure based on graphene covering layer. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method of manufacturing a semiconductor device structure. (Drawing includes non-English language text) Step for forming an epitaxial structure on the semiconductor substrate (S2) Step for forming a graphene film on the surface of the indium- aluminum-nitrogen barrier layer (S3) Step for forming a source electrode and a drain electrode on the surface of the graphene film (S4) Step for defining gate opening on the epitaxial structure between the source electrode and the drain electrode (S5) Step for forming dielectric passivation layer on the indium-aluminum-nitrogen barrier layer corresponding to the gate opening and forming a gate structure on the dielectric passivation layer to prepare a gallium-nitride device (S6)