▎ 摘　　要

NOVELTY - Making (M1) graphene layers (420) involves forming an article (430) that comprises a carbon-containing self-assembled monolayer (SAM); depositing a layer of nickel (410) on the SAM; heating the article in a reducing atmosphere; and cooling the article, where the heating and cooling steps are carried out so as to convert the SAM to a graphene layer. USE - For making graphene layers useful for making article (claimed). ADVANTAGE - The graphene synthesis method can form large films of uniform, controllable thickness at costs that are low enough to make this material industrially relevant. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method (M2) involving depositing a layer of amphiphilic compounds having at least two different chemical compositions onto a substrate (440), allowing the layer to self-assemble into a self-assembled monolayer (SAM) comprising at least two regions of different chemical compositions, each region is principally composed of a respective amphiphilic compound, and heating and cooling the patterned layer so as to convert it to a layer of graphene; (2) an article (A1) formed by the method (M1); (3) an article (A2) comprising a semiconductive layer of graphene that includes at least one n-type or p-type domain and at least one p-n, p-i, or n-i junction; (4) an article (A3) comprising a semiconductive layer of graphene that includes at least one n-type domain and at least one p-type domain; and (5) an article (A4) comprising a semiconductive layer of graphene that includes at least one doped region in which at least one n-type or p-type dopant has a concentration gradient with a specified profile. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the process for synthesizing graphene layers. Layer of nickel (410) Graphene layer (420) Article (430) Substrate (440)