▎ 摘　　要

NOVELTY - The device has a reflecting substrate (1) whose side is fully covered with a silicon substrate (2). The silicon substrate is provided with a graphene layer (3) far away from a side local position of the reflecting substrate. A side of the graphene layer is fully covered with a silicon covering layer far away from the silicon substrate. An electrode assembly is electrically connected with the graphene layer and the reflective substrate. The graphene layer is formed by combining multiple graphene units, where multiple graphene units are periodically arranged. The graphene unit is provided with a long side, a connecting part and a short side. The long side, the connecting part and the short side are connected in a transverse H-shaped structure. USE - Double-channel terahertz complete absorption device for use in a photoelectric device. ADVANTAGE - The device generates surface plasma induced transparent effect, so as to generate absorption effect, reaches absorption effect close to hundred percent, and realizes complete absorption of the double channel under the terahertz wave band. The device realizes an absorption device under tera-hertz band. The device realizes ultra-high absorption, small size, thin thickness, easy integration and manufacturing. The device effectively improves absorption performance of absorption device. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a double-channel terahertz complete absorption device for use in a photoelectric device. 1Reflecting substrate 2Silicon substrate 3Graphene layer 51Electrode