• 专利标题:   Growing three-dimensional graphene used in graphical processing of two dimensional and three-dimensional material, involves manufacturing a mask pattern by using mechanical processing technology or micro nano-processing technology.
  • 专利号:   CN106315570-A, CN106315570-B
  • 发明人:   YU Y, FENG S, HU Y, SUN T, YANG J, WEI D, SHI H, DU C, YU L
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL, CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN106315570-A 11 Jan 2017 C01B-032/186 201719 Pages: 8 Chinese
  • 申请详细信息:   CN106315570-A CN10695374 19 Aug 2016
  • 优先权号:   CN10695374

▎ 摘  要

NOVELTY - Growing three-dimensional graphene involves manufacturing a mask pattern by using mechanical processing technology or micro nano-processing technology, where mask pattern is selected from high-melting point metal plate as mask substrate, and mask pattern can be of any shape. The mask is fixed on the growth substrate, placed in microwave chemical vapor deposition vacuum chamber and hydrogen gas is introduced, where hydrogen flow rate is 30-100 standard cubic centimeter per minute. The argon gas is used to load carbon source, where argon gas flow rate is 100 standard cubic centimeter per minute. USE - Method for growing three-dimensional graphene used in graphical processing of two dimensional and three-dimensional material (claimed). ADVANTAGE - The method enables to grow three-dimensional graphene which is cost-effective, eco-friendly, easy to process and suitable for industrial production, has high efficiency, and does not require heat treatment. DETAILED DESCRIPTION - Growing three-dimensional graphene involves manufacturing a mask pattern by using mechanical processing technology or micro nano-processing technology, where mask pattern is selected from high-melting point metal plate as mask substrate, and mask pattern can be of any shape. The mask is fixed on the growth substrate, placed in microwave chemical vapor deposition vacuum chamber and hydrogen gas is introduced, where hydrogen flow rate is 30-100 standard cubic centimeter per minute. The argon gas is used to load carbon source, where argon gas flow rate is 100 standard cubic centimeter per minute. The microwave power is 0.5-5 kiloWatt and pressure is 10-100 millibar. The three-dimensional graphene starts to deposit without heating, where the growth time is 2-30 minutes.