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  • 专利标题:   Growing method of graphene film on insulating substrate used for electrical or electrochemical device comprises preparing oxidized aqueous graphene solution containing weak acid, adding insulating substrate, hydrothermal reacting and drying.
  • 专利号:   CN106082178-A, CN106082178-B
  • 发明人:   ZHAO C, WANG S, SHAO X, MA Y, ZHAO L, QIAN X
  • 专利权人:   UNIV EAST CHINA SCI TECHNOLOGY, UNIV EAST CHINA SCI TECHNOLOGY
  • 国际专利分类:   C01B031/04, C01B032/184
  • 专利详细信息:   CN106082178-A 09 Nov 2016 C01B-031/04 201703 Pages: 7 Chinese
  • 申请详细信息:   CN106082178-A CN10381337 01 Jun 2016
  • 优先权号:   CN10381337

▎ 摘　　要

NOVELTY - Growing method of graphene film on insulating substrate comprises preparing oxidized aqueous graphene solution containing weak acid; adding insulating substrate and hydrothermal reacting 90-220 degrees C for 18-30 hours; and taking out substrate, cleaning, and drying. USE - Method for growing graphene film on insulating substrate (claimed) used for electrical or electrochemical device. ADVANTAGE - The method does not need expensive instrument equipment and has simple process, easy control, and low cost.