• 专利标题:   Producing substrate comprises e.g. adding graphene oxide and epoxy resin into polymethacrylate, and coating organic layer precursor, composite layer precursor and ceramic layer precursor on clean silicon wafer.
  • 专利号:   CN107331600-A
  • 发明人:   PENG D, YUAN L
  • 专利权人:   SUZHOU YIKETAI ELECTRONIC MATERIAL CO
  • 国际专利分类:   G01J009/00, H01L021/02, H01L031/18
  • 专利详细信息:   CN107331600-A 07 Nov 2017 H01L-021/02 201806 Pages: 7 Chinese
  • 申请详细信息:   CN107331600-A CN10590321 10 Jul 2017
  • 优先权号:   CN10590321

▎ 摘  要

NOVELTY - Producing substrate comprises e.g. (i) adding graphene oxide and epoxy resin into polymethacrylate, adding methyl trimethoxysilane and diphenylsilanediol, stirring, adding diethyl phosphite, diisopropylbenzene, (ii) adding hexachloroiridium ammonium acetate into ethanol and trifluoroacetic acid, (iii) washing centrifugal precipitate with water, (iv) adding polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, and (v) adding nano-powder into precursor organic layer, and (vi) coating organic layer precursor, composite layer precursor and ceramic layer precursor on clean silicon wafer. USE - The substrate is useful for detecting light waves, producing substrate precursor, optical detection system, optical wave detector, light wave detection device and product in light wave detection (all claimed). ADVANTAGE - The substrate has high speed, high sensitivity and high signal to noise ratio. DETAILED DESCRIPTION - Producing substrate comprises (i) adding graphene oxide and epoxy resin into polymethacrylate, refluxing and stirring for 10 minutes, adding methyl trimethoxysilane and diphenylsilanediol, stirring for 45 minutes, adding diethyl phosphite, diisopropylbenzene and stirring for 10 minutes to obtain organic layer precursor, (ii) adding hexachloroiridium ammonium acetate into ethanol and trifluoroacetic acid, stirring, adding sec-butyllithium and stannous octoate under the protection of nitrogen, adding aquoeus ammonia, refluxing and stirring for 80 minutes, and naturally cooling after reacting for 90 minutes to room temperature, adding ethyl acetate and allowing to stand for centrifugation to obtain pellet, (iii) washing centrifugal precipitate with water and dispersing in ethanol to obtain dispersed system, adding aluminum nitrate nonahydrate, cobalt nitrate and water into dispersion system, and stirring for 35 minutes, adding trimarium samarium and stirring for 3 hours to obtain ceramic layer precursor, (iv) centrifugating precipitate in water, dispersing in ethanol to obtain dispersed system, then adding polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, reacting at 60 degrees C for 2 hours, then mixing methyl 4-vinylbenzoate, 3-aminopropylmethyldimethoxysilane and polyhydroxybutyrate, refluxing for 10 minutes and then concentrating to obtain concentrate with solids content of 65%, subjecting concentrate to gravity treatment, then spray-drying to obtain nano-powder, where super gravity processing speed is 45000-50000 revolution per minute, flow of concentrate is 140-150 ml/minutes, and (v) adding nano-powder into precursor organic layer, stirring for 15 minutes after adding carbon nanotubes, stirring for 90 minutes to obtain composite precursor, and (vi) coating organic layer precursor, composite layer precursor and ceramic layer precursor on clean silicon wafer to obtain substrate, and drying after each coating at 200 degrees C. INDEPENDENT CLAIMS are also included for: (1) producing substrate precursor comprising combining organic layer precursor, composite layer precursor and ceramic layer precursor to obtain substrate precursor; (2) producing optical detection system comprising preparing aluminum gallium nitride/gallium-nitrogen layer by epitaxial method on substrate, then preparing active area mesa, gate dielectric, Ohmic contact window and electrode to obtain light wave detector, encapsulating light wave detector to obtain light wave detection device, combining light wave detection device, support, computer and light to obtain light detection system; (3) preparing optical wave detector comprising preparing aluminum gallium nitride/gallium-nitride layer by epitaxial method on substrate combining active region mesa, gate dielectric, Ohmic contact window and electrode to obtain light wave detector; (4) preparing light wave detection device comprising preparing aluminum gallium nitride/gallium-nitrogen layer by epitaxial method on substrate, then preparing active area mesa, gate dielectric, Ohmic contact window and electrode to obtain light wave detection device, encapsulating light wave detector to obtain light wave detection device; and (5) product obtained by above method.