▎ 摘　　要

NOVELTY - The method involves growing graphene in the recessed pattern area of the pattern substrate, growing a group III nitride film with air pores on the pattern substrate grown with graphene. The air pores are formed between the pattern substrate and the III-nitride thin film, above the graphene. The pattern substrate comprised multiple round hole-shaped nano-pattern holes on the surface, and the graphene selective region is grown in the round hole-shaped nano-pattern hole area of the sapphire substrate. The method comprised the growth III-nitride film is a growth aluminum nitride film or a gallium nitride film. USE - Method for growing nitride film structure on pattern substrate (claimed). ADVANTAGE - In the method, the single-layer graphene insertion layer with a good surface integrity grown in a selective region is inserted first, before epitaxial growth. Moreover, by utilizing the characteristic of extremely low surface adsorption rate of metal atoms on defect-free graphene, the nitride is induced to nucleate only in the planar area and grow in a three-dimensional mode. The implementation process of the method is simple and suitable for applications in the field of nitride film growth and optoelectronic device and electronic device manufacturing. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating a method for growing a nitride film structure on a pattern substrate. (Drawing includes non-English language text)