▎ 摘　　要

NOVELTY - Photodeposition of a particles on graphene-semiconductor hybrid panel involves providing graphene-semiconductor hybrid panel comprising a semiconductor substrate and a graphene sheet, dipping the graphene-semiconductor hybrid panel in a fluid and forming photoinduced electrons and holes in the semiconductor substrate by irradiating the semiconductor substrate using a light source until the precursor has been reduced or oxidized to form particles photodeposited on a surface of the graphene sheet. The graphene sheet is adhered to a surface of the semiconductor substrate. USE - Photodeposition of particles on graphene-semiconductor hybrid panel for forming semiconductor structure (claimed). Uses include but are not limited to biomedical detector, solar cells, touch panel, thermal conductive pad, high-performance display, transparent conductive film, ambient light sensor, fuel cell and lithium cells. ADVANTAGE - The photodeposition process provides excellent charge transfer efficiency of the particles, and is easily applied to a large-sized graphene-semiconductor hybrid panel and improves electrochemical activity. DETAILED DESCRIPTION - Photodeposition of particles on graphene-semiconductor hybrid panel involves providing a graphene-semiconductor hybrid panel comprising a semiconductor substrate and a graphene sheet, dipping the graphene-semiconductor hybrid panel in a fluid containing a precursor and forming photoinduced electrons and holes in the semiconductor substrate by irradiating the semiconductor substrate using a light source until the precursor has been reduced or oxidized to form particles photodeposited on a surface of the graphene sheet by the photoinduced electrons and holes transferred to the graphene sheet. The graphene sheet is adhered to a surface of the semiconductor substrate. The light source has an energy equal to or more than a band gap of the semiconductor substrate. An INDEPENDENT CLAIM is included for semiconductor structure obtained by photodeposition process.