• 专利标题:   Method for preparing oxidized graphite alkene quantum point humidity sensor, involves forming electrode substrate oxidized graphene quantum dot film between first electrode and second electrode for measuring humidity.
  • 专利号:   CN106124574-A, CN106124574-B
  • 发明人:   CHEN X, LI N
  • 专利权人:   UNIV SOUTHWEST JIAOTONG, UNIV SOUTHWEST JIAOTONG
  • 国际专利分类:   G01N027/12
  • 专利详细信息:   CN106124574-A 16 Nov 2016 G01N-027/12 201680 Pages: 7 Chinese
  • 申请详细信息:   CN106124574-A CN10443637 16 Jun 2016
  • 优先权号:   CN10443637

▎ 摘  要

NOVELTY - The method involves cleaning a surface of a silicon substrate to form a silicon dioxide layer. Electrostatic force is determined between first electrode and second electrode i.e. gold electrode. Concentration of the substrate is 0.2-2 mg/mL. The substrate is dipped into deionized water for rinsing for 1-30 minutes. The washed substrate is placed in a protective gas container that is not higher than 50 degree Celsius. An electrode substrate oxidized graphene quantum dot film is formed between the first and second electrodes for measuring humidity. USE - Method for preparing an oxidized graphite alkene quantum point humidity sensor. ADVANTAGE - The method enables preparing an oxidized graphite alkene quantum point humidity sensor with quick response speed, high wet erosion resistance and strong anti-electromagnetic interference ability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an oxidation graphite alkene quantum point humidity sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an oxidized graphite alkene quantum point humidity sensor.