▎ 摘　　要

NOVELTY - The copper interconnection device has a copper pattern layer (120). A liner/barrier layer (130) is formed on at least a portion of a lateral surface and a lower surface of the copper pattern layer. A dielectric layer (140) is formed so as to contact with at least a portion of an outer surface of the liner/barrier layer. A capping layer (110) is formed on an exposed surface of the copper pattern layer. The capping layer is graphene having a functional group on a surface. USE - Copper interconnection device for electronic devices such as semiconductors and displays. ADVANTAGE - The graphene having a functional group on the surface is used as the capping layer and it can applied to a fine copper interconnection because electro migration of the copper interconnection can be suppressed even by the capping layer as thin as ones of nm or less. The surface of the graphene is introduced with the functional group and thus functionalized, so that thin film properties of monolayer graphene are maintained and the effects on copper atoms can be enhanced and enabling such graphene to function as the capping layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of fabricating a copper interconnection device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of copper interconnection structures. Capping layer (110) Copper pattern layer (120) Liner barrier layer (130) Dielectric layer (140)