• 专利标题:   Preparing graphene film useful in electronic devices, comprises adjusting catalyst on silicon carbide substrate, heating obtained reaction sample, dissolving the silicon atoms contained in silicon carbide substrate and post treating.
  • 专利号:   CN111717911-A
  • 发明人:   ZHU H, WU T, CHEN J, ZHANG C, SHI Z, YU G
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B032/188
  • 专利详细信息:   CN111717911-A 29 Sep 2020 C01B-032/188 202089 Pages: 16 Chinese
  • 申请详细信息:   CN111717911-A CN11030351 28 Oct 2019
  • 优先权号:   CN11030351

▎ 摘  要

NOVELTY - Preparing graphene film comprises adjusting catalyst on silicon carbide substrate to obtain reaction sample, heating the reaction sample at first preset temperature and allowing to stand, and dissolving the silicon atoms contained in the silicon carbide substrate in the liquid catalyst. The melting point of the catalyst is lower than a first preset temperature. USE - The graphene film is useful in electronic devices. ADVANTAGE - The method does not utilize additional gaseous carbon source; and has reduced process difficulty.