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  • 专利标题:   Photoelectric material adjustable absorption enhancing layer, comprises single-layer graphene having micro-nano scale structure.
  • 专利号:   CN104851929-A
  • 发明人:   QIN S, YUAN X, ZHU Z, ZHANG J
  • 专利权人:   UNIV NAT DEFENSE TECHNOLOGY
  • 国际专利分类:   H01L031/0232
  • 专利详细信息:   CN104851929-A 19 Aug 2015 H01L-031/0232 201578 Pages: 14 Chinese
  • 申请详细信息:   CN104851929-A CN10152982 02 Apr 2015
  • 优先权号:   CN10152982

▎ 摘　　要

NOVELTY - A photoelectric material adjustable absorption enhancing layer comprises single-layer graphene having micro-nano scale structure, where graphene is doped to a certain concentration, and the Fermi level Ef of the graphene is 0.1eV to -0.1eV. USE - Photoelectric material adjustable absorption enhancing layer.