• 专利标题:   Electronic device manufacturing method involves regulating crystal orientation along extension direction of graphene and width of graphene with scanning probe microscope.
  • 专利号:   JP2009043939-A, JP5186831-B2
  • 发明人:   HIROSE S, IWAI D, OFUCHI M, OBUCHI M
  • 专利权人:   FUJITSU LTD
  • 国际专利分类:   C01B031/02, H01L021/02, H01L021/3205, H01L021/336, H01L023/52, H01L027/12, H01L029/06, H01L029/47, H01L029/786, H01L029/872, H01L021/768, H01L023/532
  • 专利详细信息:   JP2009043939-A 26 Feb 2009 H01L-029/06 200918 Pages: 15 Japanese
  • 申请详细信息:   JP2009043939-A JP207369 09 Aug 2007
  • 优先权号:   JP207369

▎ 摘  要

NOVELTY - The crystal orientation along the extension direction of graphene (1) and width of graphene are regulated by the scanning probe microscope. The graphene is used as channel (3) of FET and the band gap is arbitrarily controlled by width direction perpendicular to the extension direction of the channel. The crystal orientation along extension direction of graphene and width of graphene are regulated by the atomic force microscope, magnetic force microscope or electric force microscope in a hydrogen atmosphere. USE - Electronic device manufacturing method. ADVANTAGE - Small-sized and high-speed transistor can be manufactured by controlling the width and crystal orientation direction of graphene arbitrarily. DESCRIPTION OF DRAWING(S) - The drawing shows the explanatory view illustrating the manufacturing process of electronic device. (Drawing includes non-English language text) Graphene (1) Cantilever (2) Channel (3) Substrate (4) Insulator (5)