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  • 专利标题:   Growing method of graphene involves placing nitride substrate in center portion of plate heater, supplying non-oxidizing gas and carbon-containing substance, stopping supply of carbon source, and cooling grown product.
  • 专利号:   CN102181924-A, CN102181924-B
  • 发明人:   CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H
  • 专利权人:   SUZHOU NANOWIN SCI TECHNOLOGY CO LTD, SUZHOU INST NANOTECH NANOBIONICS, CHINESE ACAD SCI SUZHOU INST NANOTECH
  • 国际专利分类:   C30B025/18, C30B029/02
  • 专利详细信息:   CN102181924-A 14 Sep 2011 C30B-025/18 201171 Pages: 4 Chinese
  • 申请详细信息:   CN102181924-A CN10078118 30 Mar 2011
  • 优先权号:   CN10078118

▎ 摘　　要

NOVELTY - A III group nitride substrate is placed in center portion of a plate heater, and a non-oxidizing gas is supplied. A carbon-containing substance as carbon source is supplied to grow graphene, and supply of carbon source is stopped. A non-oxidizing gas is continuously introduced, and grown material is cooled to room temperature. Thus, growing method of graphene is enabled. USE - Growing method of graphene (claimed).