▎ 摘　　要

NOVELTY - Improving quality of metal catalytic thin layer prepared by sputtering comprises (1) cleaning Si/SiO2 substrate; (2) photoetching the pattern; (3) sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table; (4) peeling, obtaining the patterned sputtering metal thin layer; (5) etching the sputtered metal, introducing mixed gas Ar: SiCl4 into the reaction chamber, setting radio frequency RF power and ICP powe, (6) using multitemperature area CVD growth graphene the patterned metal catalytic thin layer, finishing the growth of graphene in the third temperature zone of the threetemperature zone tubular furnace, introducing argon gas to wash the chamber, introducing hydrogen into the chamber, heating under the pure hydrogen atmosphere, finishing the growth of the graphene under the condition of the chamber pressure of 770Pa and etching the metal catalytic thin layer to obtain the insitu patterned graphene. USE - The method is useful for improving quality of metal catalytic thin layer prepared by sputtering.