• 专利标题:   Graphene nanoplatelet metal matrix composite for semiconductor device e.g. semiconductor chip, has graphene comprising graphene nanoplatelets, which is uniformly and horizontally oriented in metal matrix.
  • 专利号:   US2011108978-A1, US8263843-B2
  • 发明人:   KIM N P, HUANG J P
  • 专利权人:   BOEING CO
  • 国际专利分类:   H01B001/04, H01L021/50, H01L023/34, H01L023/373
  • 专利详细信息:   US2011108978-A1 12 May 2011 H01L-023/34 201134 Pages: 9 English
  • 申请详细信息:   US2011108978-A1 US614215 06 Nov 2009
  • 优先权号:   US614215

▎ 摘  要

NOVELTY - The metal matrix composite has graphene comprising graphene nanoplatelets (10) having a thickness of less than about 1nm or 100nm. A metal matrix is selected from a group comprising copper and aluminum. The graphene is uniformly and horizontally oriented in the metal matrix. USE - Graphene nanoplatelet metal matrix composite for semiconductor device (claimed) e.g. semiconductor chip mounted in thermal management structure e.g. avionics chassis, heat spreader, equipment enclosure, cold plate, rack, tray, shelf, heat sink, heat exchanger, radiator, heat pipe (all claimed) and thermal management plate of semiconductor package (claimed). Can also be used in microprocessor, power inverter/converter, solid state switch, application specific integrated circuit, graphics accelerator chip and insulated gate bipolar transistor (IGBT). ADVANTAGE - The thermal conductivity and thermal conductivity-to-weight ratio of the graphene metal matrix composite are improved. The mechanical stress of the graphene metal matrix composite is improved. The weight and cost of the graphene metal matrix composite are reduced. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) semiconductor package; and (2) method of forming graphene metal matrix composite. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene nanoplatelet. Graphene nanoplatelet (10) Height of graphene nanoplatelet (H) Length of graphene nanoplatelet (L) Width of graphene nanoplatelet (W)