▎ 摘　　要

NOVELTY - The random storage device has substrate (1) that is set with surface grid, grid cover and grate oxide layer (6). An insulation surface is set with source electrode (3) and drain electrode (4). The grate oxide layer is set between source electrode and drain electrode. An active layer (5) made of graphene is set on the substrate. An interlayer insulation layer (7) is set in electric conduction plug (8). A graphene oxide layer is set on upper electrode (10). USE - Variable-resistance random storage device. ADVANTAGE - The speed of storage device is improved and power consumption of the storage device is reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of variable-resistance random storage device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the variable-resistance random storage device. Substrate (1) Source electrode (3) Drain electrode (4) Active layer (5) Grate oxide layer (6) Interlayer insulation layer (7) Electric conduction plug (8) Upper electrode (10)