▎ 摘　　要

NOVELTY - Photochemical mechanical grinding method, comprises (i) building photochemical mechanical grinding platform with full-band coverage of UV light and adjustable intensity and light-proof, and (ii) adjusting process parameters, and grinding modified layer: (ii-a) starting upper drive motor, applying mechanical force downward, staring driving motor, and grinding the diamond-bonded abrasive grinding disc, (ii-b) adjusting UV light LED lamp, using UV radiation energy to induce cracking of the photoinitiator compound in the photosensitive active polishing liquid to produce benzoyl radicals and alkyl radical active species, forming modified layer on the surface of the workpiece layer, grinding modified layer, and (ii-c) weighing the mass of the ground workpiece, calculating the material removal rate of the workpiece, measuring the surface roughness of the workpiece, and observing the surface of the ground workpiece with field emission scanning electron microscope. USE - The method is useful for photochemical mechanical grinding. ADVANTAGE - The method ensures high-quality, and high-efficiency ultra-precision processing of materials. DETAILED DESCRIPTION - Photochemical mechanical grinding method, comprises (i) building photochemical mechanical grinding platform with full-band coverage of UV light and adjustable intensity and light-proof, and (ii) adjusting process parameters of the photochemical mechanical grinding platform, and grinding modified layer of the workpiece: (ii-a) starting upper drive motor to drive diamond-bonded abrasive grinding disc to rotate, applying mechanical force downward, staring driving motor to drive the worktable to drive the workpiece to rotate, and grinding the diamond-bonded abrasive grinding disc, (ii-b) adjusting UV light LED lamp to obtain UV light of suitable wavelength and intensity, using UV radiation energy to induce cracking of the photoinitiator compound in the photosensitive active polishing liquid to produce benzoyl radicals and alkyl radical active species to chemically modify the workpiece under the action of mechanical force, forming modified layer on the surface of the workpiece layer, grinding modified layer on the basis of step (ii-a), and the expression of the critical grinding depth dcwhen grinding modified layer is (dc= λ(H/E)1/2(Kc/H)2), the expression of maximum undeformed chip thickness hmof the workpiece when grinding is (hm= (2/Cr)1/2(f/vs)1/2), where λ is brittle-plastic transition factor of the photosensitive material, H is hardness of the photosensitive material, E is elastic modulus of the photosensitive material, Kcis fracture toughness of the photosensitive material, C is the number of efficient abrasive grains per unit area on the surface of the workpiece, r is ratio of chip width to thickness, f is the feed rate, and vsis the speed of the grinding disc, and (ii-c) weighing the mass of the ground workpiece using a balance, calculating the material removal rate of the workpiece, measuring the surface roughness Sa of the workpiece with white light interferometer, and observing the surface of the ground workpiece with field emission scanning electron microscope. An INDEPENDENT CLAIM is also included for photosensitive active grinding liquid for photochemical mechanical grinding method, prepared by (a) pouring deionized water and propylene glycol into a beaker in an environment without UV light, and stirring and mixing to obtain an aqueous solution of propylene glycol, (b) adding glycerin to the obtained propylene glycol aqueous solution, and stirring to obtain a mixed aqueous solution of propylene glycol and glycerin, and (c) selecting photoinitiator according to the characteristics of the optoelectronic material, configuring photoinitiator compound, adding the photoinitiator complex into the mixed aqueous solution of propylene glycol and glycerin, dissolving or dispersing in the mixed aqueous solution of propylene glycol and glycerin by stirring to obtain the photosensitive grinding liquid.