▎ 摘　　要

NOVELTY - The method involves providing an electrode (24) within a semiconductor layer (21), where the semiconductor layer is provided on a first side of a wafer. The wafer is thinned to produce a thinned wafer. Graphene (28) is provided on a second side of the thinned wafer. The semiconductor layer is attached to an electrical interface (30) on the first side of the thinned wafer. An electrical connection (32) is provided from the graphene to the electrical interface to form a transistor comprising the electrode and the graphene, where the graphene comprises quantum dots (43). USE - Method for providing a transistor i.e. graphene FET. ADVANTAGE - The method enables reducing thickness of the transistor when a substrate is thinned. The method enables reducing separation of the graphene from the electrical interface and reducing length of electrical connections, thus improving performance of the transistor to reduce noise and increase sensitivity of the transistor. The method enables reducing a need for a number of substrates and miniaturizing apparatus, thus reducing a need for a number of interconnections. DETAILED DESCRIPTION - The transistor forms a sensor. An INDEPENDENT CLAIM is also included for a small scale transistor apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a transistor comprising a passivation layer. Semiconductor layer (21) Electrode (24) Graphene (28) Electrical interface (30) Electrical connection (32) Quantum dots (43)