▎ 摘　　要

NOVELTY - The method comprises forming an alloy catalyst layer (110) on a substrate (100) using a sputtering method and/or an evaporation method, and forming a graphene layer (120) on the alloy catalyst layer by supplying hydrocarbon gas onto the substrate at a temperature of 650-750 degrees C. The alloy catalyst layer has a thickness of 10-1000 nm. The formation of the alloy catalyst layer comprises alternately stacking thin films of the two metals on the substrate, annealing the stacked thin films, and forming the stacked thin films of the two metals. USE - The method is useful for fabricating graphene, which is useful to fabricate FET. ADVANTAGE - The method is capable of simply fabricating large area graphene with improved electrical, physical, optical and mechanical characteristics, high electron mobility, low and/or decreased number of defects and increased growth speed. DETAILED DESCRIPTION - The method comprises forming an alloy catalyst layer (110) on a substrate (100) using a sputtering method and/or an evaporation method, and forming a graphene layer (120) on the alloy catalyst layer by supplying hydrocarbon gas onto the substrate at a temperature of 650-750 degrees C. The alloy catalyst layer has a thickness of 10-1000 nm. The formation of the alloy catalyst layer comprises alternately stacking thin films of the two metals on the substrate, annealing the stacked thin films, and forming the stacked thin films of the two metals by stacking a first thin films of one of the two metals with a second thin films of a different one of the two metals so that the first and second thin films are interleaved. The first thin films have a different thickness than the second thin films. DESCRIPTION OF DRAWING(S) - The diagram shows a cross-sectional view of a method of fabricating graphene using an alloy catalyst layer. Substrate (100) Silicon oxide layer (102) Alloy layer (110) Graphene layer. (120)