▎ 摘　　要

NOVELTY - Method for preparing super-resolution photo etching structure involves forming a dielectric layer (2) on the substrate (1), depositing a graphene oxide layer on the medium layer, baking and annealing the oxidation graphene layer to form a reduction oxidation graphene film layer (3), coating a silicon-containing anti-reflection coating on the reduction-oxidation graphene film layer, sequentially depositing the metal layer (5) on a Si-containing antireflection coating, and coating the photosensitive layer (6) to obtain the super-resolved photosensitive structure. USE - Method for preparing super-resolution photo etching structure. ADVANTAGE - The method improves the etching selection ratio between the reducing oxidation graphene film layer and the medium layer, avoids the problem of pattern collapse caused by over-high aspect ratio in the super-resolution photoetching image transmission, and the deformation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for transferring pattern of the super-resolution photo etching structure. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for transferring pattern of the super-resolution photo etching structure. 1Substrate 2Underlying dielectric layer 3Reduction-oxidation graphene thin film layer 4Etched si-containing anti-reflection coating 5Depositing metal layer 6Preparing photosensitive layer