• 专利标题:   Method for manufacturing MEMS acoustic sensor based on graphene, involves fixing graphene film with MEMS acoustic sensor of upper electrode and lower electrode and arranging metal interconnection layer with lower electrode.
  • 专利号:   CN107318076-A, CN107318076-B
  • 发明人:   KANG X
  • 专利权人:   SHANGHAI INTEGRATED CIRCUIT RES DEV CE
  • 国际专利分类:   H04R019/00, H04R031/00
  • 专利详细信息:   CN107318076-A 03 Nov 2017 H04R-019/00 201778 Pages: 10 Chinese
  • 申请详细信息:   CN107318076-A CN10492063 26 Jun 2017
  • 优先权号:   CN10492063

▎ 摘  要

NOVELTY - The method involves depositing an isolation layer with an upper part of a sacrificial layer. A metal interconnection layer is arranged with the isolation layer through the sacrifice layer. An edge of the sacrificial layer is arranged with the isolation layer. The isolation layer is arranged with a lower electrode. Sensor substrate etching process is performed. A sensor substrate is formed with a cavity. A graphene film is fixed with a MEMS acoustic sensor of an upper electrode and a lower electrode. The metal interconnection layer is arranged with the lower electrode. USE - Method for manufacturing a MEMS acoustic sensor based on graphene (claimed). ADVANTAGE - The method enables improving performance of the MEMS acoustic sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a MEMS acoustic sensor.