▎ 摘　　要

NOVELTY - Manufacture of graphene monolayer on silicon carbide substrate involves placing the silicon carbide substrate in a graphite tray, placing the graphite tray in a furnace chamber, heating to 1550-1650 degrees C, introducing high-purity hydrogen, etching, placing the substrate in argon atmosphere, heating at 1550-1650 degrees C for 1.5-2 hours, growing buffer layer, and annealing at 800-1200 degrees C under pressure of 800-900 mbar for 1-3 hours. USE - Manufacture of graphene monolayer on silicon carbide substrate in radiofrequency device. ADVANTAGE - The method enables manufacture of graphene monolayer on silicon carbide substrate, with improved mobility.