▎ 摘　　要

NOVELTY - The method involves depositing a metal layer on a substrate by electron beam deposition, and annealing the metal layer at temperatures below 700 Kelvin for a period of time sufficient to induce segregation of carbon in the metal layer to a surface of the metal layer. USE - Method for forming one-to-four-monolayer graphene layer on metal layer in process of manufacturing, e.g., MTJ (claimed) spin filters for development of various types of non-volatile memories, such as magnetoresistive RAM (claimed). ADVANTAGE - Permits manufacture of MTJ spin filters and related devices based on graphene on silicon complementary metal oxide (Si CMOS) semiconductor devices at temperatures and conditions consistent with those preexisting structures. High tunneling magnetoresistance values for MTJ device allow much larger arrays, smaller devices, and give on/off ratio approaching or exceeding that of existing Si CMOS devices. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) an MTJ of high tunneling magnetoresistance; and (2) a magnetoresistive RAM. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an MTJ device.