▎ 摘　　要

NOVELTY - The diode has a substrate layer (10), and the first substrate layer (20) that is grown on the substrate layer as a template buffer layer for subsequent growth. The second substrate layer (30) is grown on the first substrate layer for growing the cathode electrode. The third substrate layer (40) is grown on the second substrate layer as an active region of the Schottky diode. A graphene layer (50) is formed on the third substrate layer. An ohmic contact electrode (60) is formed on the second substrate layer to form a cathode electrode. A Schottky contact electrode (70) is formed on the graphene layer to form an anode electrode. USE - Schottky diode of semiconductor power device (claimed). ADVANTAGE - The Schottky diode has high reverse breakdown voltage and low on-resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of preparing Schottky diode. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the schottky diode. Substrate layer (10) First substrate layer (20) Second substrate layer (30) Third substrate layer (40) Graphene layer (50) Ohmic contact electrode (60) Schottky contact electrode (70)