▎ 摘　　要

NOVELTY - The structure (500) has a graphene layer (506) that is formed on substrate (502). The source and drain electrodes (508,510) are formed on graphene layer. A nitride layer (512) is formed on graphene layer between electrodes. A gate electrode (514) is formed on nitride layer. The nitride layer is gate dielectric for gate electrode. The nitride layer is made of aluminum nitride, silicon nitride, hafnium nitride or zirconium nitride. The substrate is selected from group consisting of semiconductor substrate, insulator substrate, polymer substrate, and layered substrate. USE - Semiconductor structure of semiconductor device such as MOSFET used in electronic device such as personal computer, cell phone, and digital camera. ADVANTAGE - The nitride film can be synthesized effectively in the oxygen-free ambient, thus the adhesion of the dielectrics on the grapheme can be enhanced and a higher quality of the gate dielectrics with less trapped charges can be obtained. The production yield and performance of the graphene device can be improved effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of forming semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the semiconductor structure. Semiconductor structure (500) Semiconductor substrate (502) Graphene layer (506) Source electrode (508) Drain electrode (510) Nitride layer (512) Gate electrode (514)