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  • 专利标题:   Three-dimensional integrated circuit (IC) structure for electronic application, has upper active devices that are formed using upper graphene layer formed over insulating layer, and interconnected with lower active devices.
  • 专利号:   US2011215300-A1, WO2011112300-A1, CA2787094-A1, TW201201340-A, EP2545586-A1, CN102782856-A, US8450779-B2, JP2013522873-W, CN102782856-B, JP5870046-B2, TW525775-B1, EP2545586-A4
  • 发明人:   GUO D, HAN S, LIN C, SU N, HEN S, HAN S J, LIN C H
  • 专利权人:   INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L021/8256, H01L027/088, H01L029/12, H01L021/77, H01L029/06, H01L029/16, H01L021/768, H01L023/52, H01L021/8238, H01L027/092, H01L027/28, H01L029/786, H01L051/05, H01L051/30, H01L051/40, H01L027/06
  • 专利详细信息:   US2011215300-A1 08 Sep 2011 H01L-027/088 201161 Pages: 11 English
  • 申请详细信息:   US2011215300-A1 US719058 08 Mar 2010
  • 优先权号:   US719058, CA2787094

▎ 摘　　要

NOVELTY - The IC structure has lower graphene layer which is formed over a substrate and several lower active devices that are formed using the lower graphene layer. An insulating layer (220) is formed over the lower active devices. An upper graphene layer is formed over the insulating layer and upper active devices (224) are formed using upper graphene layer. The upper active devices are electrically interconnected with the lower active devices. USE - Three-dimensional integrated circuit (IC) structure for electronic application. ADVANTAGE - The reliability and stability of IC structure can be improved. The IC structure can be manufactured easily by simple process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of forming three-dimensional integrated circuit structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of three-dimensional integrated circuit structure. Substrate (202) Lower insulating layer (204) Insulating layer (220) Upper active devices (224)