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  • 专利标题:   Manufacture of boron-doped graphene involves mixing boron compound and graphite, and heating mixture under argon atmosphere.
  • 专利号:   KR2013076243-A, KR2002600-B1
  • 发明人:   KIM Y, JUNG K Y
  • 专利权人:   RES INST IND SCI TECHNOLOGY, RES INST IND SCI TECHNOLOGY
  • 国际专利分类:   C01B031/02, C01B031/04, C01B035/02
  • 专利详细信息:   KR2013076243-A 08 Jul 2013 C01B-031/02 201370
  • 申请详细信息:   KR2013076243-A KR144756 28 Dec 2011
  • 优先权号:   KR144756

▎ 摘　　要

NOVELTY - A 1-15 pts. wt. boron compound is mixed with 100 pts. wt. graphite. The mixture is heated at 1000-2500 degrees C under argon atmosphere, to obtain boron-doped graphene. USE - Manufacture of boron-doped graphene (claimed). ADVANTAGE - The method enables manufacture of boron-doped graphene having favorable electrical property, optical property, structural property and chemical property, by controlling amount of boron doped in graphene.