▎ 摘　　要

NOVELTY - Preparing defect type graphene field emission cold cathode comprises (i) selecting and cleaning the copper foil substrate; and (ii) using radio-frequency-plasma-enhanced chemical vapor deposition to grow graphene on the surface of the copper foil substrate by changing the temperature, the radio frequency power and the gas flow rate. USE - The method is useful for preparing defect type graphene field emission cold cathode is useful for electronic source of various vacuum electronic device e.g. vacuum microelectronic device. ADVANTAGE - The method provides an experiment scheme of in-situ growing different defect type and excellent field electron emission performance of graphene cathode using radio-frequency-plasma enhanced-chemical vapor deposition (RF-PECVD) direct growth method by controlling the growth temperature, radio frequency power and gas flow rate.