• 专利标题:   Method for patterning graphene, involves bonding carbon atoms of graphene layer and oxygen atoms of glass wafer to form carbon-oxygen bonding, so that non-electrode region is formed in region where glass wafers are stacked.
  • 专利号:   KR2023070118-A
  • 发明人:   JUNGWONSUK, JIN C S, HOON K S, KO H, SUNG H, LIM T W, HOGUL
  • 专利权人:   UNIV IND ACADEMIC COOP IN CHUNGNAM NAT, UNIV WONKWANG CENT IND ACAD COOP
  • 国际专利分类:   H01B013/00
  • 专利详细信息:   KR2023070118-A 22 May 2023 H01B-013/00 202343 Pages: 10
  • 申请详细信息:   KR2023070118-A KR156103 12 Nov 2021
  • 优先权号:   KR156103

▎ 摘  要

NOVELTY - The method involves forming an insulating layer (120) on a substrate (10), and forming a graphene layer (130) on the insulating film. The graphene layer is partitioned into an electrode region and a non-electrode region. A glass wafer (140) is molded to conform to the shape of the non electrode region, and a glass lamination process is performed for laminating the wafer on the electrode region. Voltage is applied between the substrate and wafer, and carbon atoms of the graphene layer and oxygen atoms of wafer are bonded between the graphene and graphene layers. A conductive plate i.e. copper (Cu) electrode, is formed on the substrate. A channel portion is not in contact with the electrode area. USE - Method for patterning graphene. ADVANTAGE - The method enables forming an insulating layer on a substrate, where graphene layer is formed on the graphene layer and an electrode region is formed in a region where the glass wafer is stacked, and thus enables to obtain the effect of easily partitioning the electrode region. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of a method for patterning graphene.(Drawing includes non-English language text). 10Substrate 120Insulating Layer 130Graphene Layer 140Glass Wafer 142Contact Portion