• 专利标题:   Positively-charged body for triboelectric generator, has two-dimensional material layer formed on silicon oxide layer.
  • 专利号:   US2022115962-A1, KR2022046782-A
  • 发明人:   KIM J K, BAIK J M, KIM J G
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   H02N001/04, H01B003/12, H01B005/00
  • 专利详细信息:   US2022115962-A1 14 Apr 2022 H02N-001/04 202235 English
  • 申请详细信息:   US2022115962-A1 US495946 07 Oct 2021
  • 优先权号:   KR129839

▎ 摘  要

NOVELTY - The positively-charged body comprises a silicon oxide layer that is formed on the first electrode. A two-dimensional material layer made of a transition metal chalcogenide-based material or reduced graphene oxide (rGO) formed on silicon oxide. The first electrode includes a mesh electrode. The body has a silicon layer on first electrode, silicon oxide on silicon layer, and a 2D material layer. A second electrode is inserted on the negatively charged body opposite to first electrode. USE - Positively-charged body for a triboelectric generator (claimed), such as energy harvesting device of an electronic device e.g. smartphone and smartwatch. ADVANTAGE - The positively-charged body has dramatically improved charge generation efficiency, and a practical triboelectric generator including the same to supply power to electronic devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a triboelectric generator that has a positively-charged body including a silicon oxide layer formed ona first electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of a triboelectric generator