▎ 摘　　要

NOVELTY - The method involves providing (S101) a substrate with a first surface and a second surface that is opposite to the first surface. A first ruthenium oxide layer is formed (S102) on the first surface on the substrate. A graphene layer is formed on the first ruthenium oxide layer. A dielectric layer is formed (S104) on the graphene layer. The dielectric layer is etched to partially expose the graphene layer. A second ruthenium oxide layer is formed on the exposed graphene layer. The graphite is formed on the hafnium oxide bumps by selective epitaxial process alkenyl layer. An aluminum layer is formed on the exposed graphene layer, and the aluminum layer is oxidized to the aluminum oxide floor. USE - Method for fabricating graphene device. ADVANTAGE - The ruthenium layer provides nucleation sites to increase the efficiency of the fabrication process and the properties of the formed graphene device. The first dielectric layers are alternately arranged, so that the process steps are reduced and the manufacturing process is simplified. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the method for fabricating graphene device. (Drawing includes non-English language text) Step for providing substrate (S101) Step for forming first ruthenium oxide layer on the first surface on the substrate (S102) Step for forming the dielectric layer on the graphene layer (S104) Step for etching the second dielectric layer to partially expose the graphene layer (S107) Step for forming first metal layer on the second hafnium oxide layer (S109)