▎ 摘　　要

NOVELTY - Plasma enhanced chemical vapor deposition based direct synthesis of large area graphene oxide comprises carrying out substrate pretreatment, growing graphene oxide on substrate and removing graphene oxide after growth, where growing graphene oxide on substrate process comprises taking substrate, loading plasma-enhanced chemical vapor deposition system, pre-processing, growing graphene oxide, where the plasma-enhanced chemical vapor deposition system mainly composed of e.g. air supply system, vacuum system, furnace cavity, heating system, discharge circuit system. USE - The graphene oxide is useful for gas detection fields and optoelectronic devices. ADVANTAGE - The method has short time low temperature reaction. The graphene oxide has large size and good uniformity. DETAILED DESCRIPTION - Plasma enhanced chemical vapor deposition based direct synthesis of large area graphene oxide comprises (i) carrying out substrate pretreatment, (ii) growing graphene oxide on substrate and (iii) removing graphene oxide after growth, where growing graphene oxide on substrate process comprises (iia) taking substrate, loading plasma-enhanced chemical vapor deposition system, (iib) pre-processing, (iic) growing graphene oxide, where the plasma-enhanced chemical vapor deposition system mainly composed of air supply system, vacuum system, furnace cavity, heating system, discharge circuit system; the air supply system mainly used for furnace cavity and to supply gas, which includes carbon gas source, reduction gas, carrier gas flow; the vacuum system is mainly used for furnace vacuumize, and controlling air pressure in the furnace cavity; the furnace cavity is graphene oxide synthesis place; the heating system is mainly used for controlling temperature of furnace cavity; the discharge circuit system is mainly used for supplying excited gas and ionization, generating synthesis of graphene oxide required various types of particles; pretreatment process include, starting vacuum system for vacuumize furnace, opening heating system for heating furnace needed temperature, opening reduction gas for period of time; graphene oxide growth processes includes by heating system controlling reaction temperature in furnace, introducing carbon gas according to a certain mixing ratio, reduction gas into furnace cavity, carrier gas, opening discharge circuit system for a period of time and closing carbon source gas and discharge circuit; the reaction temperature is 100-700 degrees C, the discharge plasma generated by the system power is 10-100 W, method of introducing oxygen-containing groups required for the synthesis of graphene oxide is through the carbon source gas, reduction gas and carrier gas is introduced into residual oxygen or water vapour, namely the carbon source gas, reduction gas and carrier gas flow purity is less than 99.9%; or by furnace cavity inner wall, absorbing water vapor introducing, i.e. graphene oxide synthesis reaction water vapor content of the reaction space due to the inner wall of the cavity caused by the adsorption of water vapor within the greater than 100 ppm; the carbon source gas, reduction gas and carrier gas flow mixing ratio is 1:20-100:100-200, in the generation of graphene oxide, regulating mixing ratio of carbon element and oxygen element in reduction gas for change; or by regulating reaction temperature for change, the reaction time is 1-20 minutes.