• 专利标题:   Graphene-based pressure sensor of piezoresistive structure comprises a package housing, where the upper and lower ends of package housing are respectively provided with a ceramic substrate and a substrate.
  • 专利号:   CN107941385-A
  • 发明人:   LI M, OH S, ZHAO S, WANG L, WANG J, WANG G
  • 专利权人:   UNIV NORTH CHINA
  • 国际专利分类:   G01L001/18, G01L009/06
  • 专利详细信息:   CN107941385-A 20 Apr 2018 G01L-001/18 201834 Pages: 10 Chinese
  • 申请详细信息:   CN107941385-A CN11121810 14 Nov 2017
  • 优先权号:   CN11121810

▎ 摘  要

NOVELTY - Graphene-based pressure sensor of piezoresistive structure comprises a package housing, where the upper and lower ends of package housing are respectively provided with a ceramic substrate and a substrate. The ceramic substrate, the substrate and the packaging shell together define a detection space. The upper part of the substrate is a concave structure. The bottom of the concave structure is a membrane structure and a detecting unit. The detecting unit is set in the detection space. The detection unit comprises two graphene pressure-resistance structures. USE - Used as graphene-based pressure sensor of piezoresistive structure. ADVANTAGE - The structure has long-term stable work in high temperature environment (more than 1000 degrees C), has good repeatability, high reliability and good acid and alkali resistance. DETAILED DESCRIPTION - Graphene-based pressure sensor of piezoresistive structure comprises a package housing, where the upper and lower ends of package housing are respectively provided with a ceramic substrate and a substrate. The ceramic substrate, the substrate and the packaging shell together define a detection space. The upper part of the substrate is a concave structure. The bottom of the concave structure is a membrane structure and a detecting unit. The detecting unit is set in the detection space. The detection unit comprises two graphene pressure-resistance structures. The graphene pressure-resistance structure comprises boron nitride/graphene/boron nitride nano film and composite electrodes. Two boron nitride/graphene/boron nitride nano films are symmetrically arranged at the maximum stress at the edge of the membrane structure. The composite electrode is connected with the boron nitride/graphene/boron nitride nano film. The detection space is oxygen-free vacuum cavity nitride/graphene/boron nitride nano film separated from outside air. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of the graphene-based pressure sensor of piezoresistive structure (Drawing includes non-English language text).